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| IPB091N06N G IPP091N06N G OptiMOS(R) Power-Transistor Features * Low gate charge for fast switching applications * N-channel enhancement - normal level * 175 C operating temperature * Avalanche rated * Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 9.1 80 V m A Type IPP091N06N G IPB091N06N G Package Marking PG-TO220-3-1 091N06N PG-TO263-3-2 091N06N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C1) T C=100 C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 80 66 320 370 6 20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 C2) I D=80 A, R GS=25 I D=80 A, V DS=48 V, di /dt =200 A/s, T j,max=175 C mJ kV/s V W C T C=25 C 188 -55 ... 175 55/175/56 Current is limited by bondwire; with an R thJC=0.8 K/W the chip is able to carry 93 A. See figure 3 Rev. 1.0 page 1 2006-06-20 IPB091N06N G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=130 A V DS=60 V, V GS=0 V, T j=25 C V DS=60 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=60 V V GS=10 V, I D=80 A, V GS=10 V, I D=80 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=80 A 60 2.1 3 0.01 Values typ. IPP091N06N G Unit max. 0.8 62 40 K/W 4 1 V A - 1 100 41.5 1 7.6 7.3 2.3 83 100 9.1 8.8 nA m S 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 2 2006-06-20 IPB091N06N G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics4) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 4) IPP091N06N G Unit max. Values typ. C iss C oss C rss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=80 A, R G=4.7 V GS=0 V, V DS=30 V, f =1 MHz - 2100 600 150 14 29 39 28 2800 800 225 21 44 58 42 pF ns Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=30 V, V GS=10 V V DD=30 V, I D=80 A, V GS=0 to 10 V - 12 6 28 33 61 5.6 39 16 8 41 49 81 52 nC V IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=80 A, T j=25 C V R=30 V, I F=I S, di F/dt =100 A/s - 0.95 50 76 80 320 1.3 63 95 A V ns nC See figure 16 for gate charge parameter definition Rev. 1.0 page 3 2006-06-20 IPB091N06N G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V IPP091N06N G 200 180 160 140 120 90 80 70 60 50 40 30 20 10 0 0 50 100 150 200 0 50 100 150 200 P tot [W] 100 80 60 40 20 0 T C [C] I D [A] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 1 s limited by on-state resistance 2 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 10 s 100 s DC 0.5 10 1 ms 10 ms 0.2 Z thJC [K/W] I D [A] 101 10-1 0.1 0.05 0.02 100 0.01 single pulse 10-1 10 -1 10-2 10 0 10 1 10 2 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.0 page 4 2006-06-20 IPB091N06N G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 240 220 200 180 160 140 6.5 V 20 V 10 V IPP091N06N G 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 30 7V 5V 20 R DS(on) [m] I D [A] 120 100 80 60 5.5 V 6V 5.5 V 6V 10 7V 6.5 V 10 V 20 V 40 5V 20 0 0 1 2 3 4 5 0 0 20 40 60 80 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 160 140 8 Typ. forward transconductance g fs=f(I D); T j=25 C 120 100 120 100 80 60 40 40 20 0 0 1 2 3 4 5 6 7 175 C 25 C 80 g fs [S] I D [A] 60 20 0 0 40 80 120 V GS [V] I D [A] Rev. 1.0 page 5 2006-06-20 IPB091N06N G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=80 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 30 4 3.5 IPP091N06N G 25 1300 A 3 20 130 A R DS(on) [m] 2.5 15 98 % V GS(th) [V] typ 2 1.5 1 10 5 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 103 175C 98% 10 Ciss 2 175 C 25 C C [pF] 25C 98% I F [A] Coss Crss 10 3 10 1 100 102 0 10 20 30 40 50 10-1 0 1 2 3 V DS [V] V SD [V] Rev. 1.0 page 6 2006-06-20 IPB091N06N G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 102 25 C 100 C IPP091N06N G 14 Typ. gate charge V GS=f(Q gate); I D=80 A pulsed parameter: V DD 12 10 30 V 12 V 48 V 150 C 8 101 V GS [V] 100 101 102 103 I AV [A] 6 4 2 100 0 0 20 40 60 80 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 75 V GS Qg 70 V BR(DSS) [V] 65 60 V g s(th) 55 Q g (th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q gate 50 T j [C] Rev. 1.0 page 7 2006-06-20 IPB091N06N G PG-TO-263 (D-Pak) IPP091N06N G Rev. 1.0 page 8 2006-06-20 IPB091N06N G PG-TO220-3: Outline IPP091N06N G Rev. 1.0 page 9 2006-06-20 IPB091N06N G IPP091N06N G Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 10 2006-06-20 |
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